United States

As the thickness of the vibrating structures is reduced, the built-in strain of the structural materials plays an increased role in determining the mechanical performance of the devices. Here we demonstrate the realization of ultrathin doubly clamped nanomechanical resonators with an axial strain in the scale of 10^8.

EIPBN 2021

Approaching the stress-free limit in ultrathin doubly-clamped nanomechanical resonator

frequency tuning

low stress

strain engineering

nems

nanomechanical resonator

**WELCOME TO THE 2021 CAP VIRTUAL CONGRESS UNDERLINE PLATFORM**

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CAP Virtual Congress 2021

technical paper

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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Molybdenum disulfide, as  a transition metal dichalcogenide, has attracted huge attention for its good optical properties. However, to produce corresponding arrays of nano/microscale devices, resist-based lithography and etching generate permanent contaminations and damages. Here, we report a  method capable of generating arbitrary MoS2 patterns without additional lithography or etching processes.

Multiplexing Rubbing-Induced Site-Selective (RISS) Method for Manufacturing MoS2 Device Arrays

In this work, we study the photo-response properties (e.g., photoresponsivity and noise equivalent power (NEP)) of in-plane MoS2 photodetectors as the function of their geometric dimensions (e.g., thickness, length, and width of photoactive layers) and fabrication conditions (e.g., doping, etching, and substrate choice).

Fabrication optimization of the photo-response characteristics of MoS2 photodetectors for biosensing applications

CVD graphene has brought interest from the biosensors community. Previous work in our group demonstrated a unique fabrication protocol for graphene solution gated field effect transistor (SGFET). This study presents the electrochemical characterization and first biological detection campaign (using aptmamers as probe for hormone detection) of our SGFET sensors.

Electrochemical characterization of graphene gated field effect transistors: route for smart biological sensors

We have developed PHIDL, an open-source GDSII-based CAD tool for Python. PHIDL allows intuitive-but-powerful generation of geometries and has a large library of premade geometry functions ready for use, including basic shapes, text, lithographic test structures, boolean operations, placement and automatic packing algorithms, superconducting nanowires, and photonic routing.

HIDL: Intuitive GDS layout and CAD geometry creation for Python

Ultrahigh aspect-ratio structures are important for x-ray optics, energy storage, and sensors. Atomic layer deposition with nucleation and growth enhancement was developed to coat nanoporous silicon microstructures with aspect ratios up to 500:1, an order of magnitude higher than before. Devices prepared with these structures provide integrated on-chip energy storage.

Ultrahigh Aspect Ratio Silicon Nanoporous Microstructures Coated Using ALD with Nucleation Enhancement for Energy Storage and Other Applications

Virtual metrology refers to methods that employ manufacturing process related data and relevant sensor readings to predict properties of the product. The initial results examining the end-point detection of a single RIE step indicate that the approach is viable and performs better compared with traditional feature identification by user experience.

VM Modeling of Reactive Ion Etching Based on Statistics-Based and Dynamics-Inspired Spectral Features

Top-down image analysis of hexagonal hole arrays created in silicon using block-copolymer nanolithography was used to evaluate differences in dry etch rate between n-type, p-type, and intrinsic silicon.  By analyzing the hole areas and extracting the average radius and porosity, sub-nm differences in chemical etch rate could be extracted.

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

This study focuses on understanding the fundamental limitations of PMMA exposure to EUV that leads to LER and printing failures. We study the photon-PMMA interactions in EUV using dissolution rate as an indicator of exposure induced change in molecular weights. Consequently, we calculated number of reactions per photon absorbed.

Understanding the fundamental limitations of PMMA resist for EUV exposures based on dissolution rate variations through EUV dose

A short overview of the mathematical and computational methods used in LER metrology,
with special emphasis on noise effects and machine learning methods as well as a mathematical modelling approach of generating synthesized SEM images in an effort to demonstrate the pixelization effects on LER measurement

Computational Nanometrology in Line Edge Roughness Measurements: Noise and Pixelization Effects

A two-dimensional array of transmissive microshutters is designed in which light throughput can be digitally modulated at each pixel. This function is important for certain instruments, such as the near infrared spectrometer to be carried on the James Webb Space Telescope, microscopes, telephoto lenses, or digital light processors.

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Multiplexing Rubbing-Induced Site-Selective (RISS) Method for Manufacturing MoS2 Device Arrays

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