United States

Optical metasurfaces have emerged as potential candidates for next generation optical devices due to their ability to manipulate the amplitude, phase, wavenumber, and polarization of light1. They are two dimensional subwavelength structures which are engineered to abruptly impart a desired property shift to the impinging optical wavefront. Huygens metasurfaces comprise of an array of optical resonators where each resonator acts as a point source causing light to propagate in the forward direction. In our work, these metasurfaces are made using vanadium dioxide, which was chosen as a good candidate because it exhibits a reversible metal-insulator transition above 68oC. Vanadium dioxide is known for its thermochromic property, making it a promising material for smart energy-saving windows2. In this report, we present a bottom-up fabrication process for vanadium dioxide metasurfaces useful for optical modulation at short wave infrared wavelengths (SWIR). Thin films of vanadium dioxide are fabricated using pulsed laser ablation of a vanadium pentoxide target on a quartz substrate. This is done using a KrF excimer laser while flowing oxygen gas into the vacuum chamber during ablation. Electron-sensitive resist (PMMA) is spun on the film and functions as a stencil for patterning using electron beam lithography. Different hard masks have been used to achieve etched features that closely match geometries designed using finite element analysis for specific behaviors. We present results of fabricated nanoantennas using fluorine- and chlorine-based etch processes. We propose that chlorine-based etch recipes are preferred in order to achieve good anisotropy and accurate nanoscale dimensions for optical device applications.

EIPBN 2021

Fabrication of Dynamically Tunable Vanadium Dioxide Huygens Metasurfaces for Optical Modulation

optical modulation

phase transition material

vanadium dioxide

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021 
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021 
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021 
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021 
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

ESSCIRC ESSDERC 2021

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

In this contribution, the generation of multiple electron-beam from an InGaN photocathode was demonstrated. 25 electron beams were observed by irradiating 25 lasers. The averaged diameter was 0.6 mm with a gaussian distribution. The deviation in diameter was 17%.

Multiple Electron-Beam Generation from InGaN Photocathode

For direct writing laser lithography, GenISys BEAMER and LAB software allows for correcting proximity effects and to achieve fast approximation of a desired shape without tedious iterations. We show the importance of parameters such as vertical focus variation on staircase structures and lens-like shapes using a Heidelberg Instruments DWL 66+.

Bend the curve: the benefit of optical proximity correction in direct writing lithography simulation and experiment

After irradiating the electron beam, we measured the surface potential with an electrostatic force microscope (EFM).
In the presentation, we will explain the measurement results using the model we devised.

Investigation of Non-Charging Exposure Conditions for Insulating Resist Films in Electron Beam Lithography

We investigate the surface wetting properties for a range of micro/nanofabricated topography on aluminium surfaces supported by ion-beam processing to enhance liquid-solid interaction.

Surface Wetting on Micro-milled or Laser-Etched Aluminium with Ion-Beam Post-Processing

This work presents the analysis of spike, burst, and network burst activity in a microfluidic brain-on-chip. A collection of activities in the electrophysiological recordings, measured by multielectrode arrays, provided strong clues for the maintenance of human induced pluripotent stem cells-derived cortical neuron cultures in 3D for 37 days.

Detection of network burst activity in a MEMS-based 3D neuronal cell culture system

This work explored an accessible and cost-effective way to prepare high quality 2D Bi and derivatives on SiO2/Si substrates by e-beam evaporation. The electrical and thermoelectric properties were characterized. Our study builds a platform to realize high-quality 2D Bi, which may also be suitable in other Xenes.

Tuning Electrical Properties of E-beam Evaporated 2D Bi and Derivatives

In this study, we investigated whether UV-cured resin thin films modified by atomic layer deposition (ALD) could be removed completely by dry etching procedures. UV-nanoimprinted deposition masks were removed completely by sequential physical and chemical dry etching procedures, to demonstrate and area selective deposition of aluminum oxide.

Nanoimprinted Deposition Masks for Area Selective Atomic Layer Deposition of Aluminum Oxide

Long silver rods SERS layer was constructed by using fine grit (1µm) sandpaper as a template for imprinting nano-patterns. Therefore, costly nano lithographic processing was avoided. Raman spectra of R6G were obtained. The signal strength decreased linearly at reduced concentrations in logarithmic scale, as expected for SERS, down to 1nM.

 Low Cost Nano Imprint for Surface Enhanced Raman Scattering

In this work, we apply multilayer etching mask and optimize the etch process to improve etching rate and etching selectivity to pattern sapphire antireflection nanostructures. Initial results show 2-D sapphire nanostructures with 530 nm width and 470 nm height, resulting in two-fold aspect ratio enhancement over previous work.

Plasma Etching of High Aspect ratio Sapphire Antireflection Nanostructures Using Multilayer Etching Mask

Plasmonic biosensors have been attracted growing attentions in recent years because of their unique properties of high sensitivity, label-free operation, and suitable for high-throughput real-time detection. Here, we proposed a facile, use-friendly and cost-effective image-based plasmonic biosensor to detect the concentration of various biomolecule.

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Fabrication of Dynamically Tunable Vanadium Dioxide Huygens Metasurfaces for Optical Modulation

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