Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9287.pdf

**Abstract:**

In this work we propose and experimentally validate a relaxation oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible metal-insulator transition in 2-terminal Vanadium Dioxide thin film devices loaded to a MOSFET common source amplifier. We propose and validate an analytical model that connects key output signal metrics to the intrinsic properties of the phase-change VO2 device employed. In addition, we demonstrate RF and optical sensing capabilities, with sensitivities of 4.64 Hz/dBm and 4.23 Hz/mW to RF and Optical Power, respectively.

ESSCIRC ESSDERC 2021

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

voltage controlled oscillators

tunable circuits and devices

metal-to-insulator transition

vanadium dioxide

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9186848

**Abstract:**

To enable CMOS compatible GaN HEMTs for the next generation of communication systems (5G and beyond), a low gate resistance is of great importance since it directly affects the RF power gain and fMAX of the transistor. In this paper, the impact of various gate-metal stacks on the gate resistance and RF performance of the devices is studied. The optimized Ti-free gatemetal process leads to fMAX enhancement up to ~ 50% for devices scaled down to 0.32μm gate lengths. The gate resistance for the Tshaped gate is modelled from S-parameters and validated on various gate field plate geometries. The tradeoff between the gate resistance and parasitic capacitance in GaN HEMTs is highlighted in this case.

Analysis of Gate Metal Resistance in CMOS Compatible RF GaN HEMTs

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9146558

**Abstract:**

In this paper, an ultra-broadband D-band wireless front-end receiver (RX) in 45nm CMOS SOI is proposed. It achieves a Noise Figure of 8 dB, a Gain of 16 dB, a 3 dB bandwidth of 25 GHz, and occupies a compact area of 2 mm2. To our knowledge, for the first time, the required millimeter-wave Local Oscillator signal is generated on-chip. Furthermore, 108 Gb/s data-rate is demonstrated by receiving and demodulating a signal composed of 10×2.16 GHz channels with -40 dBm average power and 64 QAM modulation. With a consumption of 200 mW from a 1-V voltage supply, the proposed RX achieves an energy efficiency of 1.8 pJ/bit

A 108 Gb/S 64-QAM CMOS D-Band Rx with Integrated Lo Generation

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9178366

**Abstract:**

In this paper, an ultra-broadband D-band wireless front-end transmitter (TX) in 45 nm CMOS SOI is proposed. Based on channel bonding and 64-QAM modulation, it achieves 84.8 Gb/s data-rate by combining 8×2.16 GHz baseband channels. The eight baseband channels are aggregated at Intermediate Frequency (IF) in two sets of four channels and then up-converted to two adjacent sub-bands at D-band. The required millimeter-wave Local Oscillators (LO) are generated on-chip. The Intermediate Frequency band is 57.96 GHz to 66.66 GHz, and the considered transmission band is from 140.895 GHz to 158.265 GHz. The presented TX integrates two up-converter mixers, two power amplifiers and an on-chip power combiner in addition to the two LO generator with a total DC power consumption of 420 mW from a 1-V voltage supply, and occupies a compact active area of 2.98 mm2.

A 84.48Gb/S 64-QAM CMOS D-Band channel-Bonding Tx front-End with Integrated multi-Lo Frequency Generation

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9197.pdf

**Abstract:**

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectricdielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9167.pdf

**Abstract:**

Magnetic Tunnel Junctions (MTJs) constitute thenovel memory element in STT-MRAM, which is ramping toproduction at major foundries as an eFlash replacement. MTJswitching exhibits a stochastic behaviour due to thermal fluctu-ations, which is modelled by s-LLGS and Fokker-Planck (FP)equations. This work quantifies the effect of thermal noise,and proposes and benchmarks a new formulation for MTJinitial conditions to accurately match thermal noise results fromstatistical simulation. Further, Finite Volume Method (FVM) andanalytical solvers for the FP equation are implemented andbenchmarked. To deploy an MTJ model for circuit design, itmust be calibrated against silicon data. To address this challenge,this work presents a scheme to fit MTJ parameters to a given setof measured current, switching time and error rate data points.

A Fokker-Planck Solver to Model MTJ Stochasticity

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9251.pdf

**Abstract:**

A semi-empirical model for the optical properties of SiGe alloys is proposed, based on physical considerations and the summation of Tauc-Lorentz and parametric oscillators. The key parameters of the oscillators are intuited from the optical transition and the symmetry points in the band structure. The model is fitted on extensive experimental data, for different temperatures, germanium concentrations and for both unstrained and strained on (100) Silicium wafer cases. This model can be used in optical simulation tools, in order to help the design of optoelectronic devices based on SiGe materials.

Semi-Empirical Model for Optical Properties of Si₁−xGex Alloys Accounting for Strain and Temperature

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9265.pdf

**Abstract:**

This paper presents a new method to reliably simulate the PDE and jitter for realistic 3D device simulations of SPAD devices. This method is based on the use of electric field lines to mimic the carriers\' trajectories, which allows the transformation of a 3D problem into a multitude of 1D problems. This idea is applied to the McIntyre model for breakdown avalanche probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter in Advanced SPAD Devices

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9213.pdf

**Abstract:**

In this work, a wafer-scale fabrication of biologically sensitive Si nanowire FET is demonstrated for pH sensing and electrical detection of DNA hybridization. Based on conventional “top-down” CMOS compatible technology, our bioFETs explore a wide range of design (nanowires (NW), nanoribbons (NR), and honeycomb (HC) structures) with opening access scaled down to only 120 nm. After device fabrication, IDS-VBG transfer and IDS-VDS output characteristics show a conventional n-type FET behavior with an ION/IOFF value higher than 105, as well as an increase of threshold voltage (VTH) as the NW width is reduced. Then, using a capacitive coupling in our dual-gated Si bioFETs, the pH sensitivity is enhanced with a pH response up to 600 mV/pH. Finally, the increase of threshold voltage of n-type SiNWs due to the hybridized target DNA molecules is successfully detected

Wafer-Scale Fabrication of Biologically Sensitive Si Nanowire FET: From pH Sensing to Electrical Detection of DNA Hybridization

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9258.pdf

**Abstract:**

A CMOS industry compatible integrated resonant SiN gyroscope was fabricated with the STMicroelectronics 300 mm Photonic R&D platform. For the first time, both active Si&Ge components and low loss SiN resonant ring are integrated in an optical gyroscope, based on a ring resonator coupled to a Mach-Zehnder Interferometer. Modeling of the shot noise resolution of our device is given, resulting in a resolution of 1.08deg/s. Experimental measurement show a static gain in sensitivity of 56% compared to a single ring with the same footprint.

Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer Gyroscope

"**Please read the paper on the following link:**

https://1worldcontent.com/ess/9226.pdf

**Abstract:**

Spin-Transfer Torque Magnetic Tunnel Junctions (STT-MTJ) are devices featuring stochastic properties. They are promising candidates for non-volatile memory or true random number generators. To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and meets the needs of fast execution time. The relevance of such a model together with its fast execution velocity are illustrated with a bitstream generator.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

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