United States

Applications of electrospinning (ES) fabrication are broad and limited by hardware. Here, we present an ES system that contains multiple high voltage power supplies and enables high control over nanofiber placement, resulting in deposition of materials that have novel structures on the mesoscale.

EIPBN 2021

Highly Controlled Deposition with Multiple Electrode Electrospinning

polymer

nanofabrication

nanotechnology

electrospinning


![](https://assets.underline.io/uploads/markdown_image/1/image/2e10c515564e9ec3287ee4c664011c20.png)

The energy cost of storing and moving data is enormous, and is growing at such a rapid pace that within a few years the power demand may overwhelm some developed nations. Non-volatile memory (NVM) and neuromorphic computing are enabling critical advances in this area, but there are many scientific and technological challenges. This conference will cover the materials challenges of different memory technologies, from the fundamental processes and mechanisms, to industry perspectives on materials specifications and manufacturing.

Materials Challenges for Memory

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

In spite of M-C simulation shows strong dependence proximity function on depth (3D-PF)  it is possible to find effective α, β, η parameters for two-dimensional PF using original algorithm which considers development. Good agreement with experimental data is demonstrated thus proximity parameters now can be calculated for arbitrary layered material

PRESENTATION OF PROXIMITY FUNCTION BY THREE PARAMETERS , , BASED ON MONTE CARLO METHOD AND COMPARISON WITH EXPERIMENT

PMMA exposure sensitivity to both electrons and gallium ions at identical conditions was measured. It was found that a positive sensitivity to gallium ions is 1000 times higher than to electrons, all at the same conditions. Original procedure allowed to measure ion contrast (~3) for highly nonuniform in depth exposure

 Ion beam lithography: sensitivity/contrast in IBL vs EBL.

Our group used cellphone CMOS camera module, based on OV5648-BSI image sensor, to image 200keV electron beam in Transmission Electron Microscope and 30keV ion beam in Helium Ion Microscope.

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

This work presents an improvement in the chemical and mechanical stability of a nanofluidic device formed in poly(ethylene glycol) diacrylate (PEGDA), a PEGbased UV resin for UV-NIL, by adding a cross-linking agent.

Surface Charge Density of Nanofluidic Devices with TMPTA UV Resins of Different Cross-Linking Agent Concentration Fabricated by UV Nanoimprint Lithography

This article provide a method about controlled exfoliation of 2D Bi2Se3 via nano-imprint. which could improve the yield and electrical performance. 2D Bi2Se3 with improved performance holds great promise for innovative photoelectric and thermoelectric applications.

Exfoliation of Two-dimensional Bismuth Selenide Based on Nanoimprint Lithography

Resonances in most of the metasurfaces are strongly depends on the geometry of the dielectric nanostructures and requires costly high-precision nanofabrication techniques. So we propose a robust structural symmetry-breaking silicon metasurface with ultra-narrow transparency.

Ultra-narrow Linewidth Symmetry-breaking Silicon Metasurface for Trace Biomolecules Sensing

we report the use of localized surface plasmon resonance (LSPR) sensor for real-time, label-free monitoring the adhering process of C. albicans onto the gold nanopillar array.  We also employ this sensor feature to elucidate how C. albicans’ adhesion is affected by different electrical properties of the material surface.

Replicate Nanopillar Arrays by Soft Lithography for Real-time Biosensing of C. Albicans Adhesion

We present the fabrication of ion sliced lithium niobate on oxidized silicon for integrated optics. Using structural modeling to optimize wafer thicknesses and a bonding apparatus to match wafer bows, an 817 nm thick lithium niobate film on oxidized silicon is achieved over a centimeter scale area.

Stress reduction and wafer bow accommodation for the fabrication of thin film lithium niobate on oxidized silicon

We will discuss our use of ZnO nanoparticle-based thin films synthesized and grown at room temperature and deposited via electrophoretic deposition (EPD) onto p-doped silicon substrates.  Our experimentation plan includes using scanning electron microscopy to assess surface morphology and current-voltage characterization of ZnO/p-Si heterojunctions to study device performance potential.

Study of Electrophoretic Deposition of ZnO Nanoparticles onto Silicon Substrates and Testing Performance of ZnO/p-Si

We present results clearly demonstrating passive gradient-driven droplet motion on coating-free all-metal Al-surfaces, produced via laser-etching method.

Premium content

Highly Controlled Deposition with Multiple Electrode Electrospinning

Downloads

Next from EIPBN 2021

PRESENTATION OF PROXIMITY FUNCTION BY THREE PARAMETERS , , BASED ON MONTE CARLO METHOD AND COMPARISON WITH EXPERIMENT

Similar lecture

Memristive properties of titanium oxide nanodot structures for resistive memory