United States

We have developed a new technology for detecting single DNA molecules on-chip. A nanofluidic device was fabricated in a multi-step process to unfold the molecules in 3D inlets and guide them inside the nanochannels. No external field is applied, allowing high throughput and generate enormous data in real-time.

EIPBN 2021

High Throughput DNA Optical Mapping in Real-Time on 3D Nanofluidic Devices

3d fabrication

optical mapping

optical read out

microfluidic

nanofluidic

dna analysis

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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technical paper

Top-down image analysis of hexagonal hole arrays created in silicon using block-copolymer nanolithography was used to evaluate differences in dry etch rate between n-type, p-type, and intrinsic silicon.  By analyzing the hole areas and extracting the average radius and porosity, sub-nm differences in chemical etch rate could be extracted.

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

This study focuses on understanding the fundamental limitations of PMMA exposure to EUV that leads to LER and printing failures. We study the photon-PMMA interactions in EUV using dissolution rate as an indicator of exposure induced change in molecular weights. Consequently, we calculated number of reactions per photon absorbed.

Understanding the fundamental limitations of PMMA resist for EUV exposures based on dissolution rate variations through EUV dose

A short overview of the mathematical and computational methods used in LER metrology,
with special emphasis on noise effects and machine learning methods as well as a mathematical modelling approach of generating synthesized SEM images in an effort to demonstrate the pixelization effects on LER measurement

Computational Nanometrology in Line Edge Roughness Measurements: Noise and Pixelization Effects

A two-dimensional array of transmissive microshutters is designed in which light throughput can be digitally modulated at each pixel. This function is important for certain instruments, such as the near infrared spectrometer to be carried on the James Webb Space Telescope, microscopes, telephoto lenses, or digital light processors.

Transmissive Microshutter Arrays

As the thickness of the vibrating structures is reduced, the built-in strain of the structural materials plays an increased role in determining the mechanical performance of the devices. Here we demonstrate the realization of ultrathin doubly clamped nanomechanical resonators with an axial strain in the scale of 10^8.

Approaching the stress-free limit in ultrathin doubly-clamped nanomechanical resonator

Current networks of neurons show a biology, which represents functions similar to those reported for fetal human brain. Human brain modelling on chip can shine light on in vivo-like message passing from neuron to neuron in a dish.

Moonshot: Nanofabricating neural networks

Here, we will show the application of Cryo-FIBID to other precursors beyond W(CO)6, with the aim of obtaining ultrafast growth of metallic deposits, and eventually additional functional properties. In particular, we will discuss the results obtained using the (CH3)3Pt(CpCH3) precursor, which is commonly found in commercial FIB equipment.

Ultrafast growth of metallic deposits by focused ion beam irradiation under cryogenic conditions (Cryo-FIBID)

CMOS back-end-of-line integration is a very promising technology for the next generations of integrated circuits. Yet, electron beam lithography and alignment on multiple underlying metal layers and structures is challenging. In this paper, we present an image correlation strategy, procedure and markers to reach alignment accuracy better than 5 nm.

Comparison of alignment markers and method for electron-beam lithography on CMOS dies

Using high current focused Xe ion beam milling we fabricated ultra-deep and high quality micro-axicons in such a challenging material for microfabrication as lithium niobate. The axicons generate sub-wavelength focused beam over extended depths of focus with potential applications in microscopy and particle trapping.

Ultra-deep micro-axicons in lithium niobate by focused Xe ion beam milling

Our goal in this paper is to demonstrate a process flow for the fabrication of silicon tips using KOH based wet etching and Cryo or Bosch based dry etching approaches.

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Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

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