United States

IEEE WiPDA 2021

RF GaN

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

tutorial

A double-side cooled 10 kV, 25 A SiC MOSFET package is proposed which utilizes a wirebond-less molybdenum interconnect to alleviate thermomechanical stress and improve reliability. An effective junction-to-case thermal resistance of 0.17 ºC/W is achieved, enabling the package to dissipate a heat flux at the MOSFET surface in excess of 200 W/cm^2 with less than 30ºC temperature rise from the device junction to the package exterior. Thermal and thermomechanical finite element simulations were carried out to select materials and manufacturing processes that ensure manageable thermomechanical stress levels are maintained during fabrication and operation. Simulations were verified with experimental results and the package successfully demonstrated 150ºC continuous operation without degradation.

Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

This presentation reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described by the series connection of the forward and reverse conduction of LJFETs. This intriguing behavior of the cell-to-cell integration approach is promising because it can greatly reduce the wafer area consumed while achieving the bi-directional functions.

Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

GaNFast™ power ICs, use next-generation gallium nitride (GaN) to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026. Now, a next-generation enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection. External monitoring components – such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost. This new GaNFast generation is a core element as we “Electrify Our World™” and accelerate the conversion away from fossil fuel sources and loads. As well as enabling efficiency improvements that reduce the carbon emissions of target applications, small die-size, fewer manufacturing process steps and integrated functionality mean that GaNFast power ICs have up to 10x lower CO2 footprint than silicon-based solutions, and save 4 kg CO2 per IC shipped, vs. equivalent legacy silicon chips.

Downloads

Next from IEEE WiPDA 2021

Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

Similar lecture

Reverse Recovery and Rectification Characteristic of β-Ga2O3 Schottky Barrier Diode

.css-70qvj9{display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;}Downloads

Next from IEEE WiPDA 2021

Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

Similar lecture

Reverse Recovery and Rectification Characteristic of β-Ga2O3 Schottky Barrier Diode

Downloads