Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/nfdt-d046

poster

IEEE WiPDA 2021

November 08, 2021

United States

Critical Design Considerations for Static and Dynamic Performances on 6.5 kV 4H-SiC MOSFETs Fabricated in a 6-inch SiC Foundry

Please log in to leave a comment

Downloads

Transcript English (automatic)

Next from IEEE WiPDA 2021

An Integrated Active Gate Driver for SiC MOSFETs
technical paper

An Integrated Active Gate Driver for SiC MOSFETs

IEEE WiPDA 2021

+7Dongwoo Han
Dongwoo Han and 9 other authors

08 November 2021

Similar lecture

Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances
technical paper

Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

IEEE WiPDA 2021

+1Dongyoung KimSeung Yup JangStephen Mancini
Stephen Mancini and 3 other authors

08 November 2021