Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/9dy7-5g70

poster

IEEE WiPDA 2021

November 08, 2021

United States

Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs

Please log in to leave a comment

Downloads

Transcript English (automatic)

Next from IEEE WiPDA 2021

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes
technical paper

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

IEEE WiPDA 2021

Andrew Binder
Andrew Binder

08 November 2021

Similar lecture

Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances
technical paper

Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

IEEE WiPDA 2021

+1Dongyoung KimSeung Yup JangStephen Mancini
Stephen Mancini and 3 other authors

08 November 2021