United States

The presentation shows a submodule design for a 2 kV, 1 MW integrated modular motor drive (IMMD) for aviation applications. IMMD system and submodule structures are illustrated and the design challenges are introduced. The gate drive design, busbar design and partial disharge (PD) related studies for the submodule are discussed in detail. The submodule testing results are presented at the end. Double-pulse, short-circuit, and H-bridge test results validated the electrical performance of the sub-module. Preliminary PD tests show that the submodule is free of PD at low pressure of 87 Torr, which is the air pressure at 50,000 feet above the sealevel. The full scale inverter formed by these submodules is expected to achieve an efficiency over 99% with a power density of 35.36 kW/kg.

IEEE WiPDA 2021

Submodule Design of a 2 kV 1 MW Integrated Modular Motor Drive for Aviation Applications

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

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The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

poster

This presentation reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described by the series connection of the forward and reverse conduction of LJFETs. This intriguing behavior of the cell-to-cell integration approach is promising because it can greatly reduce the wafer area consumed while achieving the bi-directional functions.

Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

SiC Technology

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Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

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