United States

Materials Challenges for Memory

Rational design of redoxed-based memristive devices for novel computing paradigm


![](https://assets.underline.io/uploads/markdown_image/1/image/2e10c515564e9ec3287ee4c664011c20.png)

The energy cost of storing and moving data is enormous, and is growing at such a rapid pace that within a few years the power demand may overwhelm some developed nations. Non-volatile memory (NVM) and neuromorphic computing are enabling critical advances in this area, but there are many scientific and technological challenges. This conference will cover the materials challenges of different memory technologies, from the fundamental processes and mechanisms, to industry perspectives on materials specifications and manufacturing.

technical paper

Ferroelectric control of Rashba states: towards non-volatile spintronics driven by ferroelectricity

Materials to memory: why and how

Analog memory: materials, devices, applications

An opportunity for magnetoelectrics in complex oxides: designing heterostructures at the atomic scale

Smart 2D materials: the new frontier

What does gender got to do with science

Phase change memory devices for electrical and optical in-memory computing

Operando methods for determining lithiation, switching-mechanisms and phase changes in electrochemical processes

Material challenges in ferroelectric memories

Devices and materials for in-memory computing: challenges and opportunities

https://d3smihljt9218e.cloudfront.net/transcript/12086/subtitle/786f687271b1ccb84bd96e825927cf38.vtt

English (automatic)

Premium content

Rational design of redoxed-based memristive devices for novel computing paradigm

Downloads

Next from Materials Challenges for Memory

Ferroelectric control of Rashba states: towards non-volatile spintronics driven by ferroelectricity

Similar lecture

Phase change memory devices for electrical and optical in-memory computing