Using in-situ TEM¹ we follow the nanoscale wet etch chemistry and dynamics of amorphous silicon (a-Si) and crystalline silicon (c-Si) nanopillars in real-time, showing that: 1. Intermediate reaction products generated during alkaline wet-etching first aggregate as nanoclusters on the a-Si surface and subsequently nanoclusters detach, diffuse, and finally dissolve in the etchant solution. 2. Control experiments with Isopropyl alcohol (IPA) and molecular dynamics simulations¹ suggest that hydroxyl groups (OH- ) on the Si surface are primarily responsible for holding the nanoclusters of the intermediates at the nanopillar surface. 3. c-Si etching can controllably be switched between different crystallographic planes. This Si etch anisotropy arises from dynamic interaction between the byproducts and the Si surface. Preliminary data from ergy-filtered TEM, STEM and electron energy-loss spectroscopy (EELS) show promissing results and in future using these techniques, we aim to obtain a deeper understanding of the reaction dynamics.

Scaling-down silicon nanowires to sub-10 nm in alkaline solutions for next-generation 3D device application

**Session Chair: **Rahul Mishra

SYM I - MRAM and Non-volatile Computing Device/Nano Device Materials and Engineering

poster

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Scaling-down silicon nanowires to sub-10 nm in alkaline solutions for next-generation 3D device application