United States

In this work, we revisit the L-BTBT GIDL in GAA nanowire FETs and propose design guidelines for amplifying the hole accumulation and floating body effects for realizing scalable 1T-DRAM with large sense margin, high retention and low write energy. The proposed NWFET based 1T-DRAM exploiting L-BTBT GIDL for write operation exhibits an ultra-low write energy of 7.3 fJ, high sense margin of 88.4 nA and a retention time of 0.1 ms even for an ultra-short gate length of 20 nm.

DRC 2022

Revisiting Gate-Induced Drain-Leakage in Nanowire FETs for 1T-DRAM

gate-induced drain leakage

nanowire fets

capacitorless dram

dram

#### Welcome to the 60th IEEE International Reliability Physics Symposium (IRPS)!

[![](https://assets.underline.io/uploads/markdown_image/1/image/f6b8cf9ecca2209dd3e0fcebe80a2915.png)](https://underline.io/events/282/reception) [![](https://assets.underline.io/uploads/markdown_image/1/image/e787ff477f8d2b687fb0b54d83d35e11.png)](https://drive.google.com/drive/folders/1GAycr7pPrZG2ZzZP-geUL8vGWswjCB1N?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/7492fafcc0c623afe96fe15207855ed9.png)](https://www.irps.org/)
 

**General Chair Welcome Message**

Welcome to IRPS 2022! When the IRPS Management Committee began making plans for Dallas, we recognized the strong desire by the reliability physics community to return to a face-to-face symposium that we last had in Monterey in 2019. But as time progressed, we recognized that travel restrictions were not being lifted as rapidly as we anticipated. Rather than leave out those of you who could not attend in person, we adopted a hybrid format allowing for both remote attendance and remote presentations. This is a first for IRPS and I am confident it will be a success for all.

With this new hybrid format, the symposium will return to the original five-day format with Tutorials and Year in Review on the first two days. The Technical Program, Keynote Talks, Workshops and Poster session will be held on the following three days. All of these (except Workshops and Posters) will be available via real-time streaming in the US Central Time zone with virtual attendees having Q&A access to the presenters. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees for a month after the symposium with the ability to communicate with the authors.

In 2020, we were planning on co-hosting the International ESD Workshop (IEW) ESD workshop when the COVID-19 pandemic hit. For 2022, IEW will be seamlessly embedded into the IRPS Program and will sponsor three tutorials, an invited talk, two technical sessions and two evening workshops focused on ESD and latch-up. And we continue our
collaboration with our sister conference, European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF) by hosting their Best Paper and the International Integrated Reliability Workshop (IIRW) by hosting their Best Student Paper.

Our primary objective is to maintain the symposium’s leadership role in the reliability physics of microelectronic devices by attracting leading researchers to present their work and providing attendees the best place to access this information. With all the buzz in the media about whether Moore’s Law has hit its limit, IRPS has been promoting expertise developed in silicon-based reliability over the past sixty years and expanding into new material areas. This year, eight of the technical sessions are devoted to reliability in topics outside of traditional silicon, including wide bandgap GaN/SiC, emerging memory and neuromorphic computing. I hope our ability to draw these communities together will accelerate the cross-fertilization of ideas. 

The Technical Program consists of four keynote speakers, twenty-three invited speakers and eighty-seven oral presentations organized in thirty technical sessions on eighteen reliability topics. Over two evenings, there will be ten Workshops and sixty-six Poster presentations that are designed to allow in person attendees and experts to interact
with one another. With eighteen tutorials covering topics ranging from fundamental transistor and memory reliability all the way up to automotive and complex system-level reliability, this year’s symposium provides an excellent learning opportunity for engineers and scientists new to reliability as well as experienced individuals wanting to explore new
areas. The Year in Review, which serves as a summary of research in the past year, will cover 3D packaging, emerging memory and aging aware circuit designs.

Finally, I would like to express my extreme gratitude to our patrons and exhibitors, whose support makes IRPS possible.
And to all of you, our in person and virtual attendees, for supporting this symposium for sixty years!

**Charles W. Slayman, General Chair** 
**of 2022 IRPS Management Committee**
 
**About IRPS**

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

poster

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

In this work, we present the thermal impedance characterization and modeling for 5nm node FinFET devices for the first time. Considerable difference in iso-thermal frequencies ( 𝑓𝑖𝑠𝑜) for n- (∼5 GHz) and p-type (∼2.5 GHz) devices is a crucial experimental observation. Calibrated SPICE simulation shows a 40-70 °C rise in the temperature.

Self-Heating characterization and modeling of 5nm technology node FinFETs

we have developed a compact model for Trap Assisted Tunneling (TAT) based GIDL leakage, and highlighted that only BTBT (Band-to-Band-Tunneling) is not
enough to capture the physical trends of GIDL, and TAT is the essential physical mechanism at the advanced technology
nodes.

Compact Model for Trap Assisted Tunneling based GIDL

We presented a geometry-scalable thermal resistance 𝑅𝑡ℎ modeling approach for AlGaN/GaN HEMTs based on the industry-standard ASM-HEMT compact model. Three different gate peripheries (4 × 100 𝜇𝑚, 4 × 125 𝜇𝑚, and 6 × 100 𝜇𝑚) were used for this work and the value of 𝑅𝑡ℎ was extracted using the coincidence method. The derived dependence with device width was modeled empirically and incorporated in the ASM-HEMT model which resulted in a scalable DC and RF model for AlGaN/GaN HEMTs.


A width-scalable SPICE compact model for GaN HEMTs including self-heating effect

UV-LEDs are in demand for their sterilization properties. Tunnel junction UV-LEDs while solving several challenges of conventional UV-LEDs also provides a method to realize cascaded LEDs. Multi-active region UV-LEDs can enable EQE scaling, multi-wavelength emission and high output power density at reduced cost leading to commercially viable LEDs. Efficient multi-active regions can be achieved by low voltage drop tunnel junctions and optimized active regions. In this work, we demonstrate for the first time, a dual-junction UV-LED, with transparent tunnel junctions.

Multi-Active Region AlGaN Ultraviolet Light Emitting Diodes with Transparent Tunnel Junctions

Low-cost and easily integrable mid-infrared (MIR) sources are highly desired for photonic integrated circuits. Thermal incandescent MIR sources are widely used. They work by Joule heating, i.e. an electrical current through the emitter causes thermal emission according to Planck’s law. Their simple design with only two contact pads makes them integrable with typical optoelectronic components in high-volume production flows. Graphene’s emissivity is comparable to common metallic emitters. In contrast to the latter, graphene is transparent at MIR wavelengths, which enables placing large area graphene emitters in the evanescent field of integrated waveguides. This enhances emission by near-field coupling directly into the waveguide mode, avoiding the mode-mismatch to free space. Here, we present the first experimental demonstration of a graphene emitter placed directly on a photonic waveguide, hence emitting directly into the waveguide mode.

Graphene waveguide-integrated thermal infrared emitter

2D materials have gained attention for their resistive switching (RS). Platinum diselenide (PtSe2) stands out because it can be grown at CMOS back-end-of-line compatible temperatures and has excellent long-term stability. We present the first detailed study on forming free RS in PtSe2-based memristors using CMOS-compatible electrodes. We performed 45 bipolar switching cycles on four devices, finding a consistent switching ratio of 9. Excellent retention characteristics confirm the non-volatility of the RS for more than 3 days and 22 hours.

Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors

Heterojunctions made of 2D materials provide promising properties for the realization of tunnel transistors. We demonstrate band-to-band tunneling between layers of WSe2 and MoS2 contacted with few-layered graphene on both sides of the junction and completely encapsulated with hexagonal boron nitride. We also use graphene as a gate electrode, allowing us to realize devices made entirely of different 2D materials. We observe negative differential resistance confirming the tunneling transport in our devices without using any high-k dielectric or chemical doping.

Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture

We for the first time report GFETs with 2nm crystalline CaF2 as a gate insulator. We perform the analysis of device-to-device variability and hysteresis dynamics in these devices before and after annealing at 175C. Our results suggest that the counterclockwise hysteresis observed in some devices is due to adsorbates as it can be suppressed by high-temperature treatment. The remaining clockwise hysteresis is record-small which suggests that CaF2 contains much fewer insulator defects as compared to amorphous oxides like SiO2 or Al2O3. Thus, CaF2 is a very promising insulator for 2D electronics.

CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators

We demonstrated the impact of dielectric material and thickness on the stability of ITO FETs, showing that HfO2 dielectrics are more bias-stable than Al2O3 dielectrics. The ITO FETs with 10 nm HfO2 exhibit less VT shifting under both positive and negative bias stressing. This contradicts previous stability studies of other amorphous oxide semiconductors (AOS) (e.g. IGZO, In2O3) that demonstrate higher stability with Al2O3, and demonstrates the need for customized dielectric materials for better oxide FET stability.

Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties

This work describes high performance TiO2 thin film transistors using TiO2 as the gate dielectric and channel materials. Bilayer dielectric with high conduction band offset is needed for further enhacing the device performance when TiO2 is used as part of the gate dielectric.

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Next from DRC 2022

Self-Heating characterization and modeling of 5nm technology node FinFETs

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