Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9116.pdf

**Abstract:**

A 139.5-157.7 GHz D-band I/Q radar receiver with an on-chip antenna and a spillover resilient N-path baseband filter is presented. Spillover and its manifestation based on the chirp rate is discussed and a filter for spillover mitigation is implemented. The radar is characterized with 55 dB conversion gain, 8dB NF (5.6 dB EINF) and 26dB narrow-band spillover attenuation. The receiver is also capable of selectively mitigating very close-by large reflectors and the system power consumption is 67mW.

ESSCIRC ESSDERC 2021

A 67mW D-Band FMCW I/Q Radar Receiver with an N-Path Spillover Notch Filter in 28nm CMOS

radar receiver

spillover mitigation

n-path filters

broadband rf front-end

fmcw

low power

d-band

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9231.pdf

**Abstract:**

Ge MFS capacitors with ultrathin ferroelectric HZO are prepared to fabricate FTJ devices. 5 nm HZO after wake-up show good reliability and excellent polarization switching characteristics featuring high remanent polarization Pr~ 22.2 μF/cm2 and low coercive voltage Vc ~ 1.1V. These performance characteristics create the prospect for low voltage (<2 V) /low power NVM FTJ memories. According to our modeling, 5 nm FTJs suffer from low Jon, but thinner HZO devices combine high Jon (>0.1 A/cm2) and relatively large TER (>70). A sufficiently large Jon has been measured on our 3-nm HZO FTJs, albeit with lower-than-expected TER and Ion/Ioff ratios.

Scaling Ferroelectric HZO Thickness for Low Power Ge MFS-FTJ Memories

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9220.pdf

**Abstract:**

In this paper, artificial synapses based on 4-terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers, thus programming the device conductance by applying positive and negative pulses to imitate the excitation and inhibition behaviors of biological synapse, respectively. The excitatory post-synaptic current can be tuned by the back-gate bias, enabling the reconfiguration of the weight profile with high speed (20 ns) and low energy (< 1 fJ) consumption. Besides, tunable long term potentiation and depression with high endurance and low cycle-to-cycle variations are achieved. These findings demonstrate FE-SBFET has high potential as an ideal synaptic component for the future intelligent neuromorphic network.

4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9239.pdf

**Abstract:**

We present an innovative mechanism to remove electric charges from SRAM bitcells. The particularity of this countermeasure is to be compatible with SRAMs designed from foundry bitcells. We have designed and characterized an 8kB SRAM in 22nm FD-SOI technology exploiting the proposed security strategy demonstrating an erase operation accomplished in the ns time scale (versus 295µs using conventional power-off) with an additional area <5%. We have also shown the better efficiency of our solution compared to a solution without prior erasure. The use of the latter drops the ratio of zeroized addresses at 92%, while increasing energy consumption by 2.1x.

A Near-Instantaneous and Non-Invasive Erasure Design Technique to Protect Sensitive Data Stored in Secure SRAMs

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9229.pdf

**Abstract:**

A 32 Kb dual-port low-voltage SRAM in 28nm FD-SOI, featuring foundry supplied high-density 6T bitcells, is presented. Dual-port configurability is realized by a unique dual-rail architecture, utilizing boost techniques that guarantee reliable operation in low-voltage. The area cost of the array is 62% lower, compared to widely used 8T two-port or dual port SRAM arrays. The SRAM reliably operates in the low-voltage regime, and an access rate of 1MHz is measured at VMIN of 0.29V. The highest energy efficiency of 1.35 fJ/bit-access is obtained at 80MHz access rate, at a VDD of 0.54V.

A Low-Voltage 6T Dual-Port Configured SRAM with Wordline Boost in 28 nm FD-SOI

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9098.pdf

**Abstract:**

In this paper, a quadrature error corrector (QEC) for next generation DRAM interface is proposed. The proposed QEC corrects duty-cycle error and 4-phase skew simultaneously for high speed operation in DRAMs. The internally used half rate two-phase clocking reduces power by 35% and area by 40%, respectively. A prototype chip achieves less than 1.84˚ phase error for a 12.8 Gb/s and has a correctable range 100.5˚ within 120 ns lock-time using successive approximation register (SAR). A re-lock scheme to cope with voltage and temperature variation during chip operation is also proposed. It occupies an active area of 0.01 mm2 while consuming 9.8 mW with 1.0-V supply.

A 3.2-12.8Gb/s Duty-Cycle Compensating Quadrature Error Corrector for DRAM Interfaces, with Fast Locking and Low Power Characteristics

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9204657

**Abstract:**

In this work, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically < 20 K) when back gate is forward biased. Humps appear in the current, leading to oscillations of the transconductance with gate voltage, owing to mobility discontinuity due to intersubband scattering, in relation with the 2-D subband structure. The conditions for which these specific features appear in thin-film siliconon-insulator (SOI) devices have been analyzed, by varying the temperature, drain voltage, silicon channel thickness, and gate length.

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: the Effect of Back Bias on Drain Current and Transconductance

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9201379

**Abstract:**

This work presents the performance and low-frequency noise (LFN) of 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The experimental measurements and the analysis are performed as a function of temperature for the first time, focusing on cryogenic applications, down to 4.2 K. The back bias impact on device performance is evaluated. The results reveal that the threshold voltage tuning is found to be temperature independent, allowing extra drain current improvement. This is particularly interesting for short channel devices, whose drain current gain with temperature lowering is expected to be smaller in comparison with long channel MOSFETs. LFN is characterized by means of time-domain current sampling measurements. Moderate and strong inversion regimes are investigated. The carrier number with correlated mobility fluctuations model can well describe the 1/f noise behavior down to 4.2 K. The physical origin behind the drain current noise-to-signal power augmentation with temperature lowering could be mainly attributed to the normalized transconductance improvement.

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9170592

**Abstract:**

We present a digital cell library optimized for 4.2 K to create controllers that keep quantum processors coherent and entangled. The library, implemented on a standard 40nm-CMOS technology, was employed in the creation of the first 4.2 K RISC-V processor. It has achieved a minimum supply voltage of 590mV, energy-delay product of 37fJ/MHz, and maximum operating frequency of 740MHz, all at 4.2 K in continuous operation. These results have been obtained from stand-alone characterization, successfully executing small C programs/benchmarks at 4.2 K. The overall performance of the library compares well against state- of-the-art libraries designed for room temperature. In particular, we compared the performance of the proposed library against a foundry supplied library for the same process in several combinational benchmark circuits, showing significant improvements in power dissipation and frequency of operation.

A Cryo-CMOS Digital Cell Library for Quantum Computing Applications

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9146534

**Abstract:**

A scalable eight channel DAC designed in a TSMC 65-nm CMOS technology for generation of solid-state quantum bit (qubit) bias voltages is presented. Measurement results of the DAC and some additional auxiliary components like an on-chip amplifier and sigma-delta modulator at 6 K are discussed. With a low-power consumption of 2.7 μW per channel, the DAC fulfills the requirements to be placed next to qubits inside a mixing chamber of a dilution refrigerator, showing a promising way for scaling qubit numbers toward a quantum computer.

Bias Voltage DAC Operating at Cryogenic Temperatures for Solid-State Qubit Applications

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9270.pdf

**Abstract:**

The paper presents a low-power transmitter (TX) as a part of a fully-integrated 57-66 GHz FMCW radar system. The TX path includes a BPSK modulator and it is optimized for short-range operation with 0 dBm output power. A band-tuning technique is used for covering the 9 GHz band and it is tuned as the LO frequency is swept. The LO distribution is designed in a modular approach to be able to extend the number of TX paths for MIMO operation. Integrated in GF 22-nm FDSOI CMOS technology, each TX path is 570x100 um2 and consumes 17 mW.

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Scaling Ferroelectric HZO Thickness for Low Power Ge MFS-FTJ Memories

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Scaling Ferroelectric HZO Thickness for Low Power Ge MFS-FTJ Memories

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An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS

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