Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9129.pdf

**Abstract:**

This paper demonstrates complementary 2-D FETs based on molybdenum disulfide, Mos₂, as the active film. The n-type (n-FET) and p-type (p-FET) characteristics are obtained from undoped and Nb-doped Mos₂, respectively. We have achieved similar output current drives and high on-off current ratios of more than 10^6 for both devices. Based on the proposed Mos₂ FET technology, a complementary metal-oxide-semiconductor (CMOS) inverter circuit with a gain of around 20 and 85% total noise margin at a 3 V supply, is integrated, exhibiting the potential of the proposed technology for thin film applications such as in flexible electronic circuits.

ESSCIRC ESSDERC 2021

Complementary Two-Dimensional (2-D) MoS₂ FET Technology

cmos inverter

complementary fet

molybdenum disulfide (mos_2)

transition-metal dichalcogenide (tmd)

two-dimensional (2-d) materials

flexible electronics

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9125.pdf

**Abstract:**

Spatial signal processors (SSP) for emerging millimeter-wave wireless networks are critically dependent on link discovery. To avoid loss in communication, mobile devices need to locate narrow directional beams with millisecond latency. In this work, we demonstrate true-time-delay (TTD) array receiver with digitally reconfigurable delays enabling both fast beam-training with wideband data communications. We implement large delay-bandwidth product to accelerate beam training with precise beam alignment to mitigate spatial effects during data communications. Prototyped in TSMC 65nm CMOS, the TTD SSP successfully demonstrates unique frequency-to-angle mapping with 800MHz bandwidth and achieves a 12dB uniform beamforming gain across 800MHz while consuming 29mW.

A 4-Element 800MHz-BW 29mW True-Time-Delay Spatial Signal Processor Enabling Fast Beam-Training with Data Communications

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9227.pdf

**Abstract:**

This paper presents the design of a 60 GHz Quadrature Digitally-Controlled Oscillator for a low-power Frequency-Modulated Continuous Wave radar System-on-Chip. The quadrature coupling is exploited to achieve a seamless and ultra wide frequency tuning range of 11 GHz. The oscillator is designed for integration in an All-Digital Phase-Locked Loop with a simplified interface with the digital loop filter without the need for an extensive calibration. A wide-band and low-power divider chain is designed using dynamic topologies. The circuits are integrated in GF 22-nm FDX CMOS technology and consume between 12.8 and 22.4mW across the frequency range (17.6mW on average).

A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9203.pdf

**Abstract:**

This paper presents a 55-63GHz fundamental multicore VCO in a 28nm bulk CMOS process. The single-core VCO is made by stacking and magnetically coupling two NMOS-based resonators for reliability and increasing the tank energy for phase noise reduction. Potential parasitic modes which occur both in single-core and multi-core configuration are suppressed by design. The four in-phase LO outputs can also be used for LO distribution in millimeter-wave systems. The prototype achieves phase noise of -95 and -121.7dBc/Hz at 1MHz and 10MHz offset from the carrier at 55GHz with a 13.4% tuning range.

A 55-63 GHz Fundamental Quad-Core VCO with NMOS-Only Stacked Oscillator in 28 nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9171.pdf

**Abstract:**

This paper presents a wide tuning range push-push voltage-controlled oscillator (VCO) at the sub-THz frequency bands. With the introduction of a novel capacitive splitting feedback (CSF) technique and tunable source degeneration (TSD) network, the proposed VCO can simultaneously archive a wide tuning range while maintaining a high output power. The CSF technique improves the oscillation frequency by reducing the effective transistor capacitances, and a wide tuning range is achieved through the TSD network without employing varactors. The proposed VCO is fabricated in a 40-nm digital CMOS process. It shows a -3.5 dBm peak output power with 1.35% DC-to-RF efficiency and a wide tuning range of 10.16% at a center frequency of 267.2 GHz.

A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9169.pdf

**Abstract:**

This paper presents a CMOS circular-geometry quad-core voltage-controlled oscillator (VCO) with class-F operation and tail filtering to achieve ultra low phase noise in K band. The use of class-F operation in a circular-geometry multi-core VCO further lowers phase noise but results in new mode ambiguity. We introduce cross-coupled narrow and thin metal traces in the class-F transformer secondary loop to suppress this new mode ambiguity. Also, we extend the circular geometry design to the VCO tail LC filters, reducing the chip area. A proof-of-concept prototype is fabricated in a standard 65 nm CMOS technology. In measurement, the VCO operates from 17.9 to 20.7 GHz. At 19 GHz, the VCO achieves a phase noise of -115 dBc/Hz at 1 MHz offset with a figure of merit (FoM) of -188.4 dBc/Hz.

A 19 GHz Circular-Geometry Quad-Core Tail-Filtering Class-F VCO with -115 dBc/Hz Phase Noise at 1 MHz Offset in 65-nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9310.pdf

**Abstract:**

This paper proposes a periodically time-varying (PTV) inductor applied to a class-D oscillator resulting in a 4.7VDD output swing that effectively improves the phase noise in both 1/f 2 and 1/f 3 regions. Without extra switches, the PTV inductor is realized by reusing the original cross-coupled transistors in the class-D oscillator that semi-periodically cancel the magnetic flux between two coupled inductors. Fabricated in 65nm LP CMOS, the oscillator prototype operating at 0.35V measures FoMs of 192.5±1dBc/Hz at 1MHz offset frequency and 194.6±0.3dBc/Hz at 10MHz offset frequency, over a frequency tuning range from 3.67 to 4.43GHz.

A Periodically Time-Varying Inductor Applied to the Class-D VCO for Phase Noise Improvement

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9176.pdf

**Abstract:**

for automobile applications, a high-switching 48-to-5V DC-DC buck converter is implemented with 0.5μm CMOS process and 0.5μm Gallium-Nitride (GaN)-on-Si process, including the pre-charge tracking technique, temperature-dependent controlled gate driver, and adaptive relaxation gate-drive control technique, which can increase the efficiency by about 8.8% and ensure the current capacity of Enhance-GaN (E-GaN). The inner local negative feedback loop can enhance the reliability and reduce the RON by 12mΩ. The peak efficiency is as high as 95.4%.

A Pre-Charge Tracking Technique in the 40MHz High-Switching 48-to-5V DC-DC Buck Converter with GaN Switches for Reducing Large Self-Commutation Loss and Achieving a High Efficiency of 95.4%

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9148.pdf

**Abstract:**

This paper presents a load-current-regulating OLED driver for wearable light therapy devices. It is based on a single-stage DC-DC hybrid step-up converter architecture achieving high efficiency at a high conversion ratio. The hybrid topology building up the energy through two parallel paths, with an inductor and a capacitor, reduces the loss at a large DC resistance(DCR) of the inductor. Another capacitor reduces switching loss by lowering the voltage stress of switches. The proposed architecture directly regulates the load current without a current-regulation element. 93.21% efficiency is achieved with a large DCR of 200mΩ at a ratio of 4.1.

A Load-Current-Regulating OLED Lamp Driver Using a Hybrid Step-Up Converter with 93.21% Efficiency at a High Conversion Ratio of 4.1

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9316.pdf

**Abstract:**

This paper presents a switching supply modulator that enables the implementation of the challenging cyclic-prefix (CP)-length, supply and load tracking times demanded by 5G new radio (NR) applications. To break the tradeoffs among tracking speed, reliability, efficiency and power density, a Δ-T dual-zone hysteretic control is introduced, which allows the S/L tacking and power conversion to be accomplished in a single and compact power stage. A clock-injected switching spectrum regulation scheme stabilizes switching noise spectrum despite of supply, load or process variation. An IC prototype demonstrates a peak efficiency of 95.4% at 10MHz and achieves a power density of 8.9W/mm2, which, to the best of our knowledge, is 3.2 times higher than the best arts reported. It also achieves record-fast S/L tracking at 810ns/V and 327ns/A respectively, with a full power load of 3.45W.

A 8.9W/mm², 95.4%-Efficiency, CP-Length Tracking Switching Supply Modulator for 5G New Radio mm-Wave PA Arrays

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9053.pdf

**Abstract:**

This paper presents an all-paths inductor-connected buck-converter (APICBC). The APICBC balances conduction losses and has continuous paths-currents for high-frequency switching. Efficiency is optimized over a wide load current range due to the adaptive sizing of the power transistors. The converter has three inductors implemented by bond-wire and PCB patterns and operates with a switching frequency of 100 MHz. The maximum efficiency is 81.2%, and the IC is implemented in a 0.18 μm CMOS process.

Complementary Two-Dimensional (2-D) MoS₂ FET Technology

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