Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9310.pdf

**Abstract:**

This paper proposes a periodically time-varying (PTV) inductor applied to a class-D oscillator resulting in a 4.7VDD output swing that effectively improves the phase noise in both 1/f 2 and 1/f 3 regions. Without extra switches, the PTV inductor is realized by reusing the original cross-coupled transistors in the class-D oscillator that semi-periodically cancel the magnetic flux between two coupled inductors. Fabricated in 65nm LP CMOS, the oscillator prototype operating at 0.35V measures FoMs of 192.5±1dBc/Hz at 1MHz offset frequency and 194.6±0.3dBc/Hz at 10MHz offset frequency, over a frequency tuning range from 3.67 to 4.43GHz.

ESSCIRC ESSDERC 2021

A Periodically Time-Varying Inductor Applied to the Class-D VCO for Phase Noise Improvement

periodically time-varying inductor

common-mode resonance

flicker noise upconversion

class-d oscillator

voltage-controlled oscillator (vco)

phase noise

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9261.pdf

**Abstract:**

This work presents the first on-chip, mixed-signal echo state network (ESN) for the early prediction of heart disease. The ESN comprises an input layer, a non-linear projection (NP) layer, and an output layer. Only the output layer of the ESN requires training. The input layer weights are time-invariant and drawn from a static binary random distribution. Thus, the proposed ESN has significantly lower trainable parameters than other non-linear neural networks used for similar prediction tasks. A 65nm prototype is validated with the Cleveland Heart Disease (CHD) dataset. The ESN achieves a mean accuracy of 84.6% over 5 test chips while consuming 7.5nJ energy/inference.

7.5nJ/Inference CMOS Echo State Network for Coronary Heart Disease Prediction

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9045.pdf

**Abstract:**

This work presents a FloatSD8-based system on chip (SOC) for the inference as well as the training of a convolutional neural networks (CNNs). A novel number format (FloatSD8) is employed to reduce the computational complexity of the convolution circuit. By co-designing data representation and circuit, we demonstrate that the AISOC can achieve high convolution performance and optimal energy efficiency without sacrificing the quality of training. At its normal operating condition (200MHz), the AISOC prototype is capable of 0.69 TFLOPS peak performance and 1.625 TOPS/W in 28nm CMOS.

A 1.625 TOPS/W SOC for Deep CNN Training and Inference in 28nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9047.pdf

**Abstract:**

Distributed smart sensors are more and more used in applications such as biomedical or domestic monitoring. However, each sensor broadcasts data wirelessly to the others or to an aggregator, which leads to energy-hungry sensor nodes and an increased latency at the network level. To tackle both challenges, this work proposes to distribute part of the processing elements in each sensor node and presents a 28nm FDSOI ASIC implementation of an associative memory using clique-based neural networks (CBNNs) coupled with an integrated SRAM memory. It consumes 43pJ for a single inference, which is 6.5 times better than state-of-the-art associative memories implementations, for the same memory size.

A 43pJ Per Inference CBNN-Based Compute-in-Sensor Associative Memory in 28nm FDSOI

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9319.pdf

**Abstract:**

Today several speculative visions are conjecturing on what 6G will be able to offer. Nevertheless, the 6G design process is at its preliminary stages. Reality today is that hardware, technologies and new materials required to effectively meet performance targets, have not been designed, tested or even do not exist yet. The contribution of this paper is three-fold. We derive crucial 6G key performance indicators on hardware and technology design. We present a new technology design methodology for effective software-hardware components integration. Third, we suggest a paradigm shift towards goal-oriented and semantic communications. Our recent results consolidate the proposed vision.

Toward 6G: From New Hardware Design to Wireless Semantic and Goal-Oriented Communication Paradigms

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9079.pdf

**Abstract:**

A bidirectional transceiver front-end in 28nm bulk CMOS is presented. A transformer-based T/R switch is used to minimize the area occupation without reducing the linearity and the isolation between the transmitter and receiver paths. The transmitter shows a power gain of 19 dB and an output-referred P1dB of 14 dBm. At the 1 dB compression point the PAE is 18.7%. With a 100MHz 64-QAM OFDM modulated input signal, the EVM is below 5% up to an average output power of 6.6 dBm, with a corresponding PAE of 7%. The receiver has a minimum NF of 4.9 dB, a voltage gain of 17 dB and an IIP3 of -9.2 dBm, while consuming 35mW. Both TX and RX feature a very wide passband from 22 GHz to 31 GHz.

A 22–31 GHz Bidirectional 5G Transceiver Front-End in 28 nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9125.pdf

**Abstract:**

Spatial signal processors (SSP) for emerging millimeter-wave wireless networks are critically dependent on link discovery. To avoid loss in communication, mobile devices need to locate narrow directional beams with millisecond latency. In this work, we demonstrate true-time-delay (TTD) array receiver with digitally reconfigurable delays enabling both fast beam-training with wideband data communications. We implement large delay-bandwidth product to accelerate beam training with precise beam alignment to mitigate spatial effects during data communications. Prototyped in TSMC 65nm CMOS, the TTD SSP successfully demonstrates unique frequency-to-angle mapping with 800MHz bandwidth and achieves a 12dB uniform beamforming gain across 800MHz while consuming 29mW.

A 4-Element 800MHz-BW 29mW True-Time-Delay Spatial Signal Processor Enabling Fast Beam-Training with Data Communications

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9227.pdf

**Abstract:**

This paper presents the design of a 60 GHz Quadrature Digitally-Controlled Oscillator for a low-power Frequency-Modulated Continuous Wave radar System-on-Chip. The quadrature coupling is exploited to achieve a seamless and ultra wide frequency tuning range of 11 GHz. The oscillator is designed for integration in an All-Digital Phase-Locked Loop with a simplified interface with the digital loop filter without the need for an extensive calibration. A wide-band and low-power divider chain is designed using dynamic topologies. The circuits are integrated in GF 22-nm FDX CMOS technology and consume between 12.8 and 22.4mW across the frequency range (17.6mW on average).

A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9203.pdf

**Abstract:**

This paper presents a 55-63GHz fundamental multicore VCO in a 28nm bulk CMOS process. The single-core VCO is made by stacking and magnetically coupling two NMOS-based resonators for reliability and increasing the tank energy for phase noise reduction. Potential parasitic modes which occur both in single-core and multi-core configuration are suppressed by design. The four in-phase LO outputs can also be used for LO distribution in millimeter-wave systems. The prototype achieves phase noise of -95 and -121.7dBc/Hz at 1MHz and 10MHz offset from the carrier at 55GHz with a 13.4% tuning range.

A 55-63 GHz Fundamental Quad-Core VCO with NMOS-Only Stacked Oscillator in 28 nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9171.pdf

**Abstract:**

This paper presents a wide tuning range push-push voltage-controlled oscillator (VCO) at the sub-THz frequency bands. With the introduction of a novel capacitive splitting feedback (CSF) technique and tunable source degeneration (TSD) network, the proposed VCO can simultaneously archive a wide tuning range while maintaining a high output power. The CSF technique improves the oscillation frequency by reducing the effective transistor capacitances, and a wide tuning range is achieved through the TSD network without employing varactors. The proposed VCO is fabricated in a 40-nm digital CMOS process. It shows a -3.5 dBm peak output power with 1.35% DC-to-RF efficiency and a wide tuning range of 10.16% at a center frequency of 267.2 GHz.

A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9169.pdf

**Abstract:**

This paper presents a CMOS circular-geometry quad-core voltage-controlled oscillator (VCO) with class-F operation and tail filtering to achieve ultra low phase noise in K band. The use of class-F operation in a circular-geometry multi-core VCO further lowers phase noise but results in new mode ambiguity. We introduce cross-coupled narrow and thin metal traces in the class-F transformer secondary loop to suppress this new mode ambiguity. Also, we extend the circular geometry design to the VCO tail LC filters, reducing the chip area. A proof-of-concept prototype is fabricated in a standard 65 nm CMOS technology. In measurement, the VCO operates from 17.9 to 20.7 GHz. At 19 GHz, the VCO achieves a phase noise of -115 dBc/Hz at 1 MHz offset with a figure of merit (FoM) of -188.4 dBc/Hz.

A Periodically Time-Varying Inductor Applied to the Class-D VCO for Phase Noise Improvement

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Impact of the Base Resistance Noise and Design of a −190-dBc/Hz FoM Bipolar Class-C VCO

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