United States

&quot;Amorphous GaOx back-gated TFTs with Al2O3 dielectric are demonstrated. Both the channel and dielectric are grown by ALD. The TFTs exhibit high Ion/Ioff (1e6) and low sub-threshold slope (138 mV/dec).

Vt variation with forward and reverse Vg sweeps, with repeated runs, and with channel length and thickness is observed. Encapsulating the channel with in-situ ALD Al2O3 improves the Vt shift.

This is the first demonstration of ALD a-GaOx TFT, aimed towards 3D BEOL integration for More-than-Moore applications.

DRC 2021

AAmorphous ALD-grown GaOx TFT for BEOL integration

thin film transistor

amorphous oxide semiconductor

gallium oxide


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For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
<br>Zhihong Chen, Purdue University

**Technical Program Chair**
<br>Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
<br>Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

"Amorphous GaOx back-gated TFTs with Al2O3 dielectric are demonstrated. Both the channel and dielectric are grown by ALD. The TFTs exhibit high Ion/Ioff (1e6) and low sub-threshold slope (138 mV/dec).

Vt variation with forward and reverse Vg sweeps, with repeated runs, and with channel length and thickness is observed. Encapsulating the channel with in-situ ALD Al2O3 improves the Vt shift.

This is the first demonstration of ALD a-GaOx TFT, aimed towards 3D BEOL integration for More-than-Moore applications.

poster

For the first time, we have developed CuAg/Al2O3/CuAg selector by magnetron sputtering and ALD processes, which possesses bidirectional threshold switching, steep switching slope and high selectivity (~100000). The superior selectivity and stability of the CuAg/Al2O3/CuAg selector compared to pure Ag or pure Cu as symmetrical electrodes corroborates the interface optimization of the alloying electrodes. This device provides new opportunities for neuromorphic computing and 3D stacking of RRAMs.

CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM Applications

In this work, we analyze interconnects with TaS2 barrier/liner by (a) building a 3D modeling framework for the line metals and vias, (b)integrating the model with the comprehensive circuit simulation flow based on synthesis and place-and-route and (c) evaluating the resistance of different levels of metals (M1-M9) and vias (V1-V8) and the circuit implications of TaS2-augmented interconnects in comparison with the conventional interconnects.

Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/Liner

We propose our original graphene-based device structure and demonstrate its capability of fast, sensitive THz detection. We fabricated an ADGG-GFET and experimentally demonstrated that it works as a high speed, highly sensitive THz detector. These results indicate that the ADGG-GFET has capability to apply to large-capacity high-speed wireless communication system.

Fast terahertz detection by asymmetric dual-grating-gate graphene FET

Al-Rich AlGaN 3D nanosheet transistors are an ideal candidate for efficient power amplification at high frequencies. In this work, we perform a electrostatic equilibrium simulation of an AlGaN MOSFET and MOSHEMT structure by solving the 1D Schrödinger-Poisson equation. By coupling the electrostatics simulations with a virtual-source based transport model, we show that the 3D AlGaN transistors are capable of delivering >5 mA/um output current and >5 W/mm power density per nanosheet at a cutoff frequency of >150 GHz.

Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications

Record high reverse breakdown at high temperatures were demonstrated, which is a significant advance for high temperature switching applications for β-Ga2O3.

Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage

ferroelectrics, charge trap, nonvolatile memory, HfO2, HfN, Si, ECR-plasma sputtering

Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications

Ferroelectric, varactor, hysteresis, S-parameter

Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications

Ferroelectric, FTJ, tunnel junction, neuromorphic, memory

Process dependent ferroelectric switching in Metal-Ferroelectric-Dielectric-Metal FTJ stack

Analog PCM, Partial Reset, Sub-ns Pulses, Multi-level PCM, Neuromorphic Devices

Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices

Platinum diselenide, Photodetector, 2D materials, PtSe2, Infrared photodetector

AAmorphous ALD-grown GaOx TFT for BEOL integration

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CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM Applications

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